- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
73,500
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 208W (Tc) | N-Channel | - | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | ||
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79,000
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 208W (Tc) | N-Channel | - | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | |||
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74,800
One step to sell excess stocks.Or submit Qty to get quotes
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Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 208W (Tc) | N-Channel | - | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V |
