Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFS3307ZTRRPBF
Per Unit
$0.78
RFQ
42,120
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 120A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 230W (Tc) N-Channel - 75V 120A (Tc) 5.8 mOhm @ 75A, 10V 4V @ 150µA 110nC @ 10V 4750pF @ 50V 10V ±20V
SUM90220E-GE3
Per Unit
$1.61
RFQ
73,800
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 200V 64A D2PAK ThunderFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 230W (Tc) N-Channel - 200V 64A (Tc) 21.6 mOhm @ 15A, 10V 4V @ 250µA 48nC @ 10V 1950pF @ 100V 7.5V, 10V ±20V
SUM90220E-GE3
Per Unit
$0.79
RFQ
38,000
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 200V 64A D2PAK ThunderFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 230W (Tc) N-Channel - 200V 64A (Tc) 21.6 mOhm @ 15A, 10V 4V @ 250µA 48nC @ 10V 1950pF @ 100V 7.5V, 10V ±20V
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