4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFS3207ZPBF
Per Unit
$1.76
RFQ
24,520
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 120A D2PAK HEXFET® Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 300W (Tc) N-Channel - 75V 120A (Tc) 4.1 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6920pF @ 50V 10V ±20V
IRFS3207ZTRRPBF
GET PRICE
RFQ
72,960
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 120A D2PAK HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 300W (Tc) N-Channel - 75V 120A (Tc) 4.1 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6920pF @ 50V 10V ±20V
IRFS3207ZTRRPBF
Per Unit
$1.73
RFQ
67,640
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 120A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 300W (Tc) N-Channel - 75V 120A (Tc) 4.1 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6920pF @ 50V 10V ±20V
IRFS3207ZTRRPBF
Per Unit
$0.89
RFQ
43,280
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 120A D2PAK HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263) 300W (Tc) N-Channel - 75V 120A (Tc) 4.1 mOhm @ 75A, 10V 4V @ 150µA 170nC @ 10V 6920pF @ 50V 10V ±20V
Page 1 / 1