- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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33,280
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|
Vishay Siliconix | MOSFET N-CH 650V TO263 | S | Last Time Buy | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 250W (Tc) | N-Channel | - | 600V | 22A (Tc) | 190 mOhm @ 11A, 10V | 4V @ 250µA | 110nC @ 10V | 2.81nF @ 25V | 10V | ±30V | ||
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GET PRICE |
32,080
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|
ON Semiconductor | PMOS D2PAK 100V 60 MOHM | - | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3.75W (Ta), 155W (Tc) | P-Channel | - | 100V | 33.5A (Tc) | 60 mOhm @ 16.75A, 10V | 4V @ 250µA | 110nC @ 10V | 2910pF @ 25V | 10V | ±25V | ||
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42,120
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|
Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | HEXFET® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 230W (Tc) | N-Channel | - | 75V | 120A (Tc) | 5.8 mOhm @ 75A, 10V | 4V @ 150µA | 110nC @ 10V | 4750pF @ 50V | 10V | ±20V |
