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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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20,420
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A CST3B | U-MOSVII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 215 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | ||
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33,160
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A CST3B | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 215 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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51,100
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 2A CST3B | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | 1W (Ta) | N-Channel | - | 40V | 2A (Ta) | 215 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | 130pF @ 10V | 1.8V, 8V | ±12V | |||
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GET PRICE |
53,100
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | ||
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41,580
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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62,340
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|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A CST3B | U-MOSVI | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, No Lead | CST3B | - | P-Channel | - | 20V | 2A (Ta) | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V |
