3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TK12V60W,LVQ
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RFQ
70,320
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12V60W,LVQ
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RFQ
29,400
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
TK12V60W,LVQ
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RFQ
19,600
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Toshiba Semiconductor and Storage MOSFET N CH 600V 11.5A 5DFN DTMOSIV Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 4-VSFN Exposed Pad 4-DFN-EP (8x8) 104W (Tc) N-Channel Super Junction 600V 11.5A (Ta) 300 mOhm @ 5.8A, 10V 3.7V @ 600µA 25nC @ 10V 890pF @ 300V 10V ±30V
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