Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFH80N25X3
Per Unit
$4.59
RFQ
51,460
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 250V 80A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 390W (Tc) N-Channel - 250V 80A (Tc) 16 mOhm @ 40A, 10V 4.5V @ 1.5mA 83nC @ 10V 5430pF @ 25V 10V ±20V
IXFH170N25X3
Per Unit
$8.13
RFQ
30,320
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 250V 170A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 (IXFH) 960W (Tc) N-Channel - 250V 170A (Tc) 7.4 mOhm @ 85A, 10V 4.5V @ 4mA 190nC @ 10V 13500pF @ 25V 10V ±20V
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