Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$1.39
RFQ
68,120
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Infineon Technologies MOSFET N-CH 60V 240A HSOF-8 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-1 214W (Tc) N-Channel - 60V 240A (Tc) 1.2 mOhm @ 100A, 10V 3.3V @ 143µA 124nC @ 10V 9750pF @ 30V 6V, 10V ±20V
IPT007N06NATMA1
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RFQ
64,360
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Infineon Technologies MOSFET N-CH 60V 300A 8HSOF OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-1 375W (Tc) N-Channel - 60V 300A (Tc) 0.75 mOhm @ 150A, 10V 3.3V @ 280µA 287nC @ 10V 16000pF @ 30V 6V, 10V ±20V
IPT007N06NATMA1
Per Unit
$3.60
RFQ
54,960
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Infineon Technologies MOSFET N-CH 60V 300A 8HSOF OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-1 375W (Tc) N-Channel - 60V 300A (Tc) 0.75 mOhm @ 150A, 10V 3.3V @ 280µA 287nC @ 10V 16000pF @ 30V 6V, 10V ±20V
IPT007N06NATMA1
Per Unit
$1.66
RFQ
23,320
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 300A 8HSOF OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerSFN PG-HSOF-8-1 375W (Tc) N-Channel - 60V 300A (Tc) 0.75 mOhm @ 150A, 10V 3.3V @ 280µA 287nC @ 10V 16000pF @ 30V 6V, 10V ±20V
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