Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
DMP2069UFY4-7
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RFQ
47,420
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Diodes Incorporated MOSFET P-CH 20V 2.5A 3-DFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN DFN2015H4-3 530mW (Ta) P-Channel 20V 2.5A (Ta) 54 mOhm @ 2.5A, 4.5V 1V @ 250µA 9.1nC @ 4.5V 214pF @ 10V 1.8V, 4.5V ±8V
DMG3415UFY4-7
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RFQ
44,780
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Diodes Incorporated MOSFET P-CH 16V 2.5A DFN-3 - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN DFN2015H4-3 400mW (Ta) P-Channel 16V 2.5A (Ta) 39 mOhm @ 4A, 4.5V 1V @ 250µA 10nC @ 4.5V 281.9pF @ 10V 1.8V, 4.5V ±8V
DMP2069UFY4-7
Per Unit
$0.08
RFQ
77,740
One step to sell excess stocks.Or submit Qty to get quotes
Diodes Incorporated MOSFET P-CH 20V 2.5A 3-DFN - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 3-XFDFN DFN2015H4-3 530mW (Ta) P-Channel 20V 2.5A (Ta) 54 mOhm @ 2.5A, 4.5V 1V @ 250µA 9.1nC @ 4.5V 214pF @ 10V 1.8V, 4.5V ±8V
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