1 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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51,620
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Infineon Technologies | MOSFET N-CH 800V 5.7A TO251 | CoolMOS™ CE | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | PG-TO251 | 83W (Tc) | N-Channel | - | 800V | 5.7A (Tc) | 950 mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | 785pF @ 100V | 10V | ±20V |
