1 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
70,680
One step to sell excess stocks.Or submit Qty to get quotes
|
EPC | TRANS GAN 300V 4A BUMPED DIE | eGaN® | Active | Tray | GaNFET (Gallium Nitride) | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die Outline (12-Solder Bar) | N-Channel | - | 300V | 4A (Ta) | 150 mOhm @ 3A, 5V | 2.5V @ 1mA | 1.85nC @ 5V | 194pF @ 240V | 5V | +6V, -4V |
