- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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79,180
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 70A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 45W (Tc) | N-Channel | 60V | 70A (Ta) | 6.4 mOhm @ 35A, 10V | 2.3V @ 1mA | 87nC @ 10V | 5450pF @ 10V | 4.5V, 10V | ±20V | ||
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76,140
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 60A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | 75V | 60A (Ta) | 7.8 mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | 5450pF @ 10V | 4.5V, 10V | ±20V | ||
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GET PRICE |
53,040
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | 100V | 55A (Ta) | 10.5 mOhm @ 27A, 10V | 2.3V @ 1mA | 110nC @ 10V | 5700pF @ 10V | 4.5V, 10V | ±20V |
