Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
Default Photo
GET PRICE
RFQ
45,160
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 600V 0.1A TO92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92(1) 900mW (Ta) N-Channel 600V 100mA (Ta) 52 Ohm @ 50mA, 10V 3.7nC @ 10V 25pF @ 25V 10V ±30V
Default Photo
Per Unit
$0.22
RFQ
15,920
One step to sell excess stocks.Or submit Qty to get quotes
Renesas Electronics America MOSFET N-CH 400V 3A TO92 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-226-3, TO-92-3 Long Body (Formed Leads) TO-92(1) 2.54W (Tc) N-Channel 400V 3A (Ta) 2.9 Ohm @ 1.5A, 10V 6nC @ 100V 165pF @ 25V 10V ±30V
Page 1 / 1