- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
70,800
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|
NXP USA Inc. | MOSFET N-CH 100V 37.6A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 100V | 37.6A (Tc) | 20 mOhm @ 18A, 10V | 4V @ 1mA | 53.7nC @ 10V | 3600pF @ 25V | 10V | ±20V | |||
|
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17,360
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|
NXP USA Inc. | MOSFET N-CH 100V 30.7A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 100V | 30.7A (Tc) | 30 mOhm @ 10A, 10V | 4V @ 1mA | 26.6nC @ 10V | 1800pF @ 20V | 10V | ±20V | |||
|
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55,960
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|
NXP USA Inc. | MOSFET N-CH 150V 22.2A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 150V | 22.2A (Tc) | 55 mOhm @ 15A, 10V | 4V @ 1mA | 36.2nC @ 10V | 2080pF @ 25V | 5V, 10V | ±20V | |||
|
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51,380
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|
NXP USA Inc. | MOSFET N-CH 150V 19A SOT685-1 | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 150V | 19A (Tc) | 75 mOhm @ 12A, 10V | 4V @ 1mA | 26.4nC @ 10V | 1150pF @ 25V | 5V, 10V | ±20V | |||
|
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63,640
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|
NXP USA Inc. | MOSFET N-CH 200V 17.5A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 200V | 17.5A (Tc) | 85 mOhm @ 15A, 10V | 4V @ 1mA | 40nC @ 10V | 2170pF @ 30V | 10V | ±20V | |||
|
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62,840
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|
NXP USA Inc. | MOSFET N-CH 200V 14.4A 8HVSON | TrenchMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-HVSON (6x5) | 62.5W (Tc) | N-Channel | - | 200V | 14.4A (Tc) | 130 mOhm @ 12A, 10V | 4V @ 1mA | 26nC @ 10V | 1230pF @ 25V | 5V, 10V | ±20V |