Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NTMS4N01R2G
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RFQ
24,460
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ON Semiconductor MOSFET N-CH 20V 3.3A 8-SOIC - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 770mW (Ta) N-Channel 20V 3.3A (Ta) 40 mOhm @ 4.2A, 4.5V 1.2V @ 250µA 16nC @ 4.5V 1200pF @ 10V 2.5V, 4.5V ±10V
NTMS4873NFR2G
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RFQ
15,260
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ON Semiconductor MOSFET N-CH 30V 7.1A 8-SOIC - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 870mW (Ta) N-Channel 30V 7.1A (Ta) 12 mOhm @ 10A, 10V 2.5V @ 250µA 16nC @ 4.5V 1900pF @ 15V 4.5V, 10V ±20V
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