3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SI4435FDY-T1-GE3
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RFQ
30,460
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Vishay Siliconix MOSFET P-CH 30V 12.6A 8SOIC TrenchFET® Gen III Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 4.8W (Tc) P-Channel - 30V 12.6A (Tc) 19 mOhm @ 9A, 10V 2.2V @ 250µA 42nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
SI4435FDY-T1-GE3
Per Unit
$0.31
RFQ
32,840
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Vishay Siliconix MOSFET P-CH 30V 12.6A 8SOIC TrenchFET® Gen III Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 4.8W (Tc) P-Channel - 30V 12.6A (Tc) 19 mOhm @ 9A, 10V 2.2V @ 250µA 42nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
SI4435FDY-T1-GE3
Per Unit
$0.07
RFQ
62,380
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET P-CH 30V 12.6A 8SOIC TrenchFET® Gen III Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 4.8W (Tc) P-Channel - 30V 12.6A (Tc) 19 mOhm @ 9A, 10V 2.2V @ 250µA 42nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V
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