Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH3206PD
Per Unit
$6.18
RFQ
40,600
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 600V 17A TO220 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
TPH3208PS
Per Unit
$5.86
RFQ
28,820
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 650V 20A TO220 - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V
TPH3206PS
Per Unit
$5.69
RFQ
15,060
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 600V 17A TO220 - Not For New Designs Tube GaNFET (Gallium Nitride) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 600V 17A (Tc) 180 mOhm @ 11A, 8V 2.6V @ 500µA 9.3nC @ 4.5V 760pF @ 480V 8V ±18V
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