- Manufacture :
- Series :
- Part Status :
- Packaging :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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55,740
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|
Global Power Technologies Group | MOSFET N-CH 500V 4.5A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 98.4W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.5 Ohm @ 2.25A, 10V | 5V @ 250µA | 15nC @ 10V | 645pF @ 25V | 10V | ±30V | |||
|
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78,460
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|
Global Power Technologies Group | MOSFET N-CH 500V 4.5A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 92.5W (Tc) | N-Channel | - | 500V | 4.5A (Tc) | 1.65 Ohm @ 2.25A, 10V | 4V @ 250µA | 11nC @ 10V | 627pF @ 25V | 10V | ±30V | |||
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15,540
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STMicroelectronics | MOSFET N-CH 800V 4.5A TO-220AB | SuperMESH5™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 85W (Tc) | N-Channel | - | 800V | 4.5A (Tc) | 1.6 Ohm @ 2A, 10V | 5V @ 100µA | 7.5nC @ 10V | 255pF @ 100V | 10V | 30V | ||||
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18,000
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|
STMicroelectronics | MOSFET N-CH 600V TO-220 | MDmesh™ II Plus | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 60W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 1.2 Ohm @ 2.25A, 10V | 4V @ 250µA | 8nC @ 10V | 232pF @ 100V | 10V | ±25V |