Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP110N10F7
Per Unit
$1.39
RFQ
70,160
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N CH 100V 110A TO-220 DeepGATE™, STripFET™ VII Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 100V 110A (Tc) 7 mOhm @ 55A, 10V 4V @ 250µA 60nC @ 10V 5500pF @ 50V 10V ±20V
STP110N55F6
Per Unit
$1.61
RFQ
67,640
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N CH 55V 110A TO-220 DeepGATE™, STripFET™ VI Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220 150W (Tc) N-Channel - 55V 110A (Tc) 5.2 mOhm @ 60A, 10V 4V @ 250µA 120nC @ 10V 8350pF @ 25V 10V ±20V
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