Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AOT9N40
Per Unit
$0.24
RFQ
13,460
One step to sell excess stocks.Or submit Qty to get quotes
Alpha & Omega Semiconductor Inc. MOSFET N-CH 400V 8A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 132W (Tc) N-Channel - 400V 8A (Tc) 800 mOhm @ 4A, 10V 4.5V @ 250µA 16nC @ 10V 760pF @ 25V 10V ±30V
STP10N95K5
Per Unit
$2.29
RFQ
60,900
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 950V 8A TO-220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 130W (Tc) N-Channel - 950V 8A (Tc) 800 mOhm @ 4A, 10V 5V @ 100µA 22nC @ 10V 630pF @ 100V 10V ±30V
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