Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TPH3208PD
Per Unit
$6.21
RFQ
49,100
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 650V 20A TO220 - Last Time Buy Tube GaNFET (Gallium Nitride) -55°C ~ 150°C Through Hole TO-220-3 TO-220 - N-Channel 650V 20A (Tc) - - 14nC @ 8V 760pF @ 400V - -
TPH3208PS
Per Unit
$5.86
RFQ
28,820
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 650V 20A TO220 - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 96W (Tc) N-Channel 650V 20A (Tc) 130 mOhm @ 13A, 8V 2.6V @ 300µA 14nC @ 8V 760pF @ 400V 8V ±18V
TPH3212PS
Per Unit
$7.97
RFQ
33,000
One step to sell excess stocks.Or submit Qty to get quotes
Transphorm MOSFET N-CH 650V 27A TO220 - Active Tube GaNFET (Gallium Nitride) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 104W (Tc) N-Channel 650V 27A (Tc) 72 mOhm @ 17A, 8V 2.6V @ 400uA 14nC @ 8V 1130pF @ 400V 8V ±18V
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