Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP11N60DM2
Per Unit
$0.94
RFQ
56,640
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics N-CHANNEL 600 V, 0.26 OHM TYP., MDmesh™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 600V 10A (Tc) 420 mOhm @ 5A, 10V 5V @ 250µA 16.5nC @ 10V 614pF @ 100V 10V ±25V
STP8N80K5
Per Unit
$2.14
RFQ
24,540
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N CH 800V 6A TO220 SuperMESH5™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 800V 6A (Tc) 950 mOhm @ 3A, 10V 5V @ 100µA 16.5nC @ 10V 450pF @ 100V 10V ±30V
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