Packaging :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$0.86
RFQ
46,400
One step to sell excess stocks.Or submit Qty to get quotes
Sanken MOSFET N-CH 250V 20A TO-220F - Not For New Designs Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 40W (Tc) N-Channel 250V 20A (Ta) 95 mOhm @ 10A, 10V 4.5V @ 1mA - 1600pF @ 25V 10V ±30V
Default Photo
Per Unit
$0.34
RFQ
56,200
One step to sell excess stocks.Or submit Qty to get quotes
Alpha & Omega Semiconductor Inc. MOSFET N-CHANNEL 600V 10A TO220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 250W (Tc) N-Channel 600V 10A (Tc) 750 mOhm @ 5A, 10V 4.5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
AOT10N60
Per Unit
$0.87
RFQ
48,840
One step to sell excess stocks.Or submit Qty to get quotes
Alpha & Omega Semiconductor Inc. MOSFET N-CH 600V 10A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 250W (Tc) N-Channel 600V 10A (Tc) 750 mOhm @ 5A, 10V 4.5V @ 250µA 40nC @ 10V 1600pF @ 25V 10V ±30V
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