2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCP190N60
Per Unit
$2.09
RFQ
58,020
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 208W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 10V ±20V
FCP190N60-GF102
Per Unit
$1.93
RFQ
79,420
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V TO-220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 208W (Tc) N-Channel - 600V 20.2A (Tc) 199 mOhm @ 10A, 10V 3.5V @ 250µA 74nC @ 10V 2950pF @ 25V 10V ±20V
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