Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
CMF20120D
GET PRICE
RFQ
15,660
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1200V 42A TO-247-3 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 TO-247-3 215W (Tc) N-Channel - 1200V 42A (Tc) 110 mOhm @ 20A, 20V 4V @ 1mA 90.8nC @ 20V 1915pF @ 800V 20V +25V, -5V
CMF10120D
Per Unit
$8.75
RFQ
19,300
One step to sell excess stocks.Or submit Qty to get quotes
Cree/Wolfspeed MOSFET N-CH 1200V 24A TO247 Z-FET™ Obsolete Tube SiCFET (Silicon Carbide) -55°C ~ 135°C (TJ) Through Hole TO-247-3 TO-247 134W (Tc) N-Channel - 1200V 24A (Tc) 220 mOhm @ 10A, 20V 4V @ 500µA 47.1nC @ 20V 928pF @ 800V 20V +25V, -5V
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