Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AUIRFP2602
GET PRICE
RFQ
34,980
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 24V 180A TO-247AD HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD 380W (Tc) N-Channel - 24V 180A (Tc) 1.6 mOhm @ 180A, 10V 4V @ 250µA 390nC @ 10V 11220pF @ 25V 10V ±20V
AUIRFP4568-E
Per Unit
$3.84
RFQ
69,420
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 150V 171A TO247 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD 517W (Tc) N-Channel - 150V 171A (Tc) 5.9 mOhm @ 103A, 10V 5V @ 250µA 227nC @ 10V 10470pF @ 50V 10V ±30V
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