Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPP120N06S403AKSA2
GET PRICE
RFQ
48,160
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 120A PG-TO220-3 Automotive, AEC-Q101, OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 167W (Tc) N-Channel - 60V 120A (Tc) 3.2 mOhm @ 100A, 10V 4V @ 120µA 160nC @ 10V 13150pF @ 25V 10V ±20V
IPP120N06S403AKSA1
GET PRICE
RFQ
20,760
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 60V 120A TO220-3 OptiMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 167W (Tc) N-Channel - 60V 120A (Tc) 3.2 mOhm @ 100A, 10V 4V @ 120µA 160nC @ 10V 13150pF @ 25V 10V ±20V
SPP80N03S2L05AKSA1
Per Unit
$0.59
RFQ
60,100
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 80A TO-220AB OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 167W (Tc) N-Channel - 30V 80A (Tc) 5.2 mOhm @ 55A, 10V 2V @ 110µA 89.7nC @ 10V 3320pF @ 25V 4.5V, 10V ±20V
Page 1 / 1