Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRL1104
GET PRICE
RFQ
17,400
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Infineon Technologies MOSFET N-CH 40V 104A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 167W (Tc) N-Channel 40V 104A (Tc) 8 mOhm @ 62A, 10V 1V @ 250µA 68nC @ 4.5V 3445pF @ 25V 4.5V, 10V ±16V
IRL1104PBF
GET PRICE
RFQ
54,060
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 40V 104A TO-220AB HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 167W (Tc) N-Channel 40V 104A (Tc) 8 mOhm @ 62A, 10V 1V @ 250µA 68nC @ 4.5V 3445pF @ 25V 4.5V, 10V ±16V
NTP6412ANG
Per Unit
$1.06
RFQ
27,220
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 100V 58A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 167W (Tc) N-Channel 100V 58A (Tc) 18.2 mOhm @ 58A, 10V 4V @ 250µA 100nC @ 10V 3500pF @ 25V 10V ±20V
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