- Manufacture :
- Part Status :
- Technology :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Vgs (Max) :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
59,700
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET N-CH 700V TO247 | - | Obsolete | Tube | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 556W (Tc) | N-Channel | - | 700V | 110A (Tc) | 45 mOhm @ 60A, 20V | 2.4V @ 1mA | 220nC @ 20V | 3950pF @ 700V | 20V | +25V, -10V | ||
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40,800
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|
Infineon Technologies | TRENCH_MOSFETS | StrongIRFET™ | Active | - | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 556W (Tc) | N-Channel | - | 100V | - | 1.28 mOhm @ 100A, 10V | 3.8V @ 278µA | 555nC @ 10V | 25000pF @ 50V | 6V, 10V | ±20V | |||
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67,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 200V 182A TO247AC | StrongIRFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 556W (Tc) | N-Channel | - | 200V | 182A (Tc) | 6.6 mOhm @ 82A, 10V | 4V @ 270µA | 203nC @ 10V | 9820pF @ 50V | 10V | ±20V |
