3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AUIRFN7107TR
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RFQ
26,840
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 75A 8PQFN HEXFET® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 4.4W (Ta), 125W (Tc) N-Channel - 75V 14A (Ta), 75A (Tc) 8.5 mOhm @ 45A, 10V 4V @ 100µA 77nC @ 10V 3001pF @ 25V 10V ±20V
AUIRFN7107TR
Per Unit
$1.36
RFQ
64,740
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Infineon Technologies MOSFET N-CH 75V 75A 8PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 4.4W (Ta), 125W (Tc) N-Channel - 75V 14A (Ta), 75A (Tc) 8.5 mOhm @ 45A, 10V 4V @ 100µA 77nC @ 10V 3001pF @ 25V 10V ±20V
AUIRFN7107TR
Per Unit
$0.57
RFQ
49,620
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 75V 75A 8PQFN HEXFET® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PQFN (5x6) 4.4W (Ta), 125W (Tc) N-Channel - 75V 14A (Ta), 75A (Tc) 8.5 mOhm @ 45A, 10V 4V @ 100µA 77nC @ 10V 3001pF @ 25V 10V ±20V
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