- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
69,200
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|
Infineon Technologies | MOSFET P-CH 60V 18.7A D2PAK | SIPMOS® | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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GET PRICE |
75,360
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|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-220AB | SIPMOS® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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31,460
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|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-220 | SIPMOS® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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|
GET PRICE |
57,420
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | ||
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71,960
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|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V | |||
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|
65,520
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET P-CH 60V 18.7A TO-263 | SIPMOS® | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 81.1W (Ta) | P-Channel | - | 60V | 18.7A (Ta) | 130 mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | 860pF @ 25V | 10V | ±20V |
