2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPI70N10S312AKSA1
Per Unit
$0.52
RFQ
51,020
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 70A TO262-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA PG-TO262-3 125W (Tc) N-Channel - 100V 70A (Tc) 11.6 mOhm @ 70A, 10V 4V @ 83µA 66nC @ 10V 4355pF @ 25V 10V ±20V
IPP70N10S312AKSA1
Per Unit
$0.92
RFQ
12,220
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 70A TO220-3 OptiMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 100V 70A (Tc) 11.6 mOhm @ 70A, 10V 4V @ 83µA 66nC @ 10V 4355pF @ 25V 10V ±20V
Page 1 / 1