Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SSH70N10A
GET PRICE
RFQ
67,880
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ON Semiconductor MOSFET N-CH 100V 70A TO-3 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 300W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 195nC @ 10V 4870pF @ 25V 10V -
FQH70N10
GET PRICE
RFQ
40,580
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ON Semiconductor MOSFET N-CH 100V 70A TO-247 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247 214W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
FQA70N10
Per Unit
$1.47
RFQ
16,360
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 100V 70A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 214W (Tc) N-Channel - 100V 70A (Tc) 23 mOhm @ 35A, 10V 4V @ 250µA 110nC @ 10V 3300pF @ 25V 10V ±25V
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