Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHP52N06T,127
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RFQ
69,260
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NXP USA Inc. MOSFET N-CH 60V 52A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 120W (Tc) N-Channel - 60V 52A (Tc) 22 mOhm @ 25A, 10V 4V @ 1mA 36nC @ 10V 1592pF @ 25V 10V ±20V
BUK7Y12-40EX
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RFQ
65,420
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Nexperia USA Inc. MOSFET N-CH 40V 52A LFPAK TrenchMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 65W (Tc) N-Channel - 40V 52A (Tc) 12 mOhm @ 15A, 10V 4V @ 1mA 15nC @ 10V 1039pF @ 25V 10V ±20V
BUK7Y12-40EX
Per Unit
$0.46
RFQ
58,320
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Nexperia USA Inc. MOSFET N-CH 40V 52A LFPAK TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 65W (Tc) N-Channel - 40V 52A (Tc) 12 mOhm @ 15A, 10V 4V @ 1mA 15nC @ 10V 1039pF @ 25V 10V ±20V
BUK7Y12-40EX
Per Unit
$0.17
RFQ
48,740
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Nexperia USA Inc. MOSFET N-CH 40V 52A LFPAK TrenchMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount SC-100, SOT-669 LFPAK56, Power-SO8 65W (Tc) N-Channel - 40V 52A (Tc) 12 mOhm @ 15A, 10V 4V @ 1mA 15nC @ 10V 1039pF @ 25V 10V ±20V
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