Supplier Device Package :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RFQ
17,200
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IXYS MOSFET N-CH 55V 150A I4-PAC-5 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole i4-Pac™-5 ISOPLUS i4-PAC™ - N-Channel 55V 150A (Tc) 4.9 mOhm @ 110A, 10V 4V @ 1mA 86nC @ 10V - 10V ±20V
PSMN2R6-60PSQ
Per Unit
$1.57
RFQ
25,660
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Nexperia USA Inc. MOSFET N-CH 60V 150A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 326W (Tc) N-Channel 60V 150A (Tc) 2.6 mOhm @ 25A, 10V 4V @ 1mA 140nC @ 10V 7629pF @ 25V 10V ±20V
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