Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPB180N04S4L01ATMA1
Per Unit
$0.65
RFQ
57,740
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 188W (Tc) N-Channel - 40V 180A (Tc) 1.2 mOhm @ 100A, 10V 2.2V @ 140µA 245nC @ 10V 19100pF @ 25V 4.5V, 10V +20V, -16V
IPB180N03S4L01ATMA1
Per Unit
$0.65
RFQ
56,840
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 30V 180A TO263-7-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 188W (Tc) N-Channel - 30V 180A (Tc) 1.05 mOhm @ 100A, 10V 2.2V @ 140µA 239nC @ 10V 17600pF @ 25V 4.5V, 10V ±16V
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