Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
MTP3055V
GET PRICE
RFQ
22,240
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 60V 12A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 48W (Tc) N-Channel - 60V 12A (Tc) 150 mOhm @ 6A, 10V 4V @ 250µA 17nC @ 10V 500pF @ 25V 10V ±20V
FQP11P06
Per Unit
$0.51
RFQ
79,060
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ON Semiconductor MOSFET P-CH 60V 11.4A TO-220 QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 53W (Tc) P-Channel - 60V 11.4A (Tc) 175 mOhm @ 5.7A, 10V 4V @ 250µA 17nC @ 10V 550pF @ 25V 10V ±25V
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