Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
9 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPD18P06P
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RFQ
16,540
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Infineon Technologies MOSFET P-CH 60V 18.6A TO-252 SIPMOS® Obsolete Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 80W (Tc) P-Channel - 60V 18.6A (Tc) 130 mOhm @ 13.2A, 10V 4V @ 1mA 33nC @ 10V 860pF @ 25V 10V ±20V
SPD18P06P
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RFQ
33,640
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Infineon Technologies MOSFET P-CH 60V 18.6A TO-252 SIPMOS® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 80W (Tc) P-Channel - 60V 18.6A (Tc) 130 mOhm @ 13.2A, 10V 4V @ 1mA 33nC @ 10V 860pF @ 25V 10V ±20V
SPD18P06P
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RFQ
21,020
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Infineon Technologies MOSFET P-CH 60V 18.6A TO-252 SIPMOS® Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 80W (Tc) P-Channel - 60V 18.6A (Tc) 130 mOhm @ 13.2A, 10V 4V @ 1mA 33nC @ 10V 860pF @ 25V 10V ±20V
SPD18P06PGBTMA1
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RFQ
75,340
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Infineon Technologies MOSFET P-CH 60V 18.6A TO252-3 SIPMOS® Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 80W (Tc) P-Channel - 60V 18.6A (Tc) 130 mOhm @ 13.2A, 10V 4V @ 1mA 33nC @ 10V 860pF @ 25V 10V ±20V
SPD18P06PGBTMA1
Per Unit
$0.70
RFQ
70,100
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Infineon Technologies MOSFET P-CH 60V 18.6A TO252-3 SIPMOS® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 80W (Tc) P-Channel - 60V 18.6A (Tc) 130 mOhm @ 13.2A, 10V 4V @ 1mA 33nC @ 10V 860pF @ 25V 10V ±20V
SPD18P06PGBTMA1
Per Unit
$0.27
RFQ
31,780
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Infineon Technologies MOSFET P-CH 60V 18.6A TO252-3 SIPMOS® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 80W (Tc) P-Channel - 60V 18.6A (Tc) 130 mOhm @ 13.2A, 10V 4V @ 1mA 33nC @ 10V 860pF @ 25V 10V ±20V
IPD22N08S2L50ATMA1
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RFQ
66,900
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Infineon Technologies MOSFET N-CH 75V 27A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 75W (Tc) N-Channel - 75V 27A (Tc) 50 mOhm @ 50A, 10V 2V @ 31µA 33nC @ 10V 630pF @ 25V 5V, 10V ±20V
IPD22N08S2L50ATMA1
Per Unit
$0.55
RFQ
75,800
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Infineon Technologies MOSFET N-CH 75V 27A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 75W (Tc) N-Channel - 75V 27A (Tc) 50 mOhm @ 50A, 10V 2V @ 31µA 33nC @ 10V 630pF @ 25V 5V, 10V ±20V
IPD22N08S2L50ATMA1
Per Unit
$0.21
RFQ
32,040
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Infineon Technologies MOSFET N-CH 75V 27A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 75W (Tc) N-Channel - 75V 27A (Tc) 50 mOhm @ 50A, 10V 2V @ 31µA 33nC @ 10V 630pF @ 25V 5V, 10V ±20V
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