2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
PHP63NQ03LT,127
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RFQ
57,240
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NXP USA Inc. MOSFET N-CH 30V 68.9A TO220AB TrenchMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 111W (Tc) N-Channel - 30V 68.9A (Tc) 13 mOhm @ 25A, 10V 2.5V @ 1mA 9.6nC @ 5V 920pF @ 25V 5V, 10V ±20V
PHD63NQ03LT,118
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RFQ
62,960
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NXP USA Inc. MOSFET N-CH 30V 68.9A DPAK TrenchMOS™ Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 111W (Tc) N-Channel - 30V 68.9A (Tc) 13 mOhm @ 25A, 10V 2.5V @ 1mA 9.6nC @ 5V 920pF @ 25V 5V, 10V ±20V
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