Drain to Source Voltage (Vdss) :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
HUFA76629D3
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RFQ
28,460
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ON Semiconductor MOSFET N-CH 100V 20A IPAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 110W (Tc) N-Channel - 100V 20A (Tc) 52 mOhm @ 20A, 10V 3V @ 250µA 46nC @ 10V 1285pF @ 25V 4.5V, 10V ±16V
HUF76629D3
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RFQ
75,000
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 100V 20A IPAK UltraFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 110W (Tc) N-Channel - 100V 20A (Tc) 52 mOhm @ 20A, 10V 3V @ 250µA 46nC @ 10V 1285pF @ 25V 4.5V, 10V ±16V
HUFA76429D3
Per Unit
$1.06
RFQ
37,640
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 60V 20A IPAK UltraFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251AA 110W (Tc) N-Channel - 60V 20A (Tc) 23 mOhm @ 20A, 10V 3V @ 250µA 46nC @ 10V 1480pF @ 25V 4.5V, 10V ±16V
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