4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPB240N03S4LR8ATMA1
Per Unit
$0.94
RFQ
16,220
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH TO263-7 Automotive, AEC-Q101, OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab) PG-TO263-7-3 300W (Tc) N-Channel - 30V 240A (Tc) 0.76 mOhm @ 100A, 10V 2.2V @ 230µA 380nC @ 10V 26000pF @ 25V 4.5V, 10V ±16V
IXFH320N10T2
Per Unit
$7.04
RFQ
70,180
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 100V 320A TO-247 HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 1000W (Tc) N-Channel - 100V 320A (Tc) 3.5 mOhm @ 100A, 10V 4V @ 250µA 430nC @ 10V 26000pF @ 25V 10V ±20V
IXFT320N10T2
Per Unit
$6.94
RFQ
25,940
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 100V 320A TO-26 GigaMOS™, HiPerFET™, TrenchT2™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 1000W (Tc) N-Channel - 100V 320A (Tc) 3.5 mOhm @ 100A, 10V 4V @ 250µA 430nC @ 10V 26000pF @ 25V 10V ±20V
IXTT440N04T4HV
Per Unit
$4.66
RFQ
55,080
One step to sell excess stocks.Or submit Qty to get quotes
IXYS 40V/440A TRENCHT4 PWR MOSFET TO- TrenchT4™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 940W (Tc) N-Channel - 40V 440A (Tc) 1.25 mOhm @ 100A, 10V 4V @ 250µA 480nC @ 10V 26000pF @ 25V 10V ±15V
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