Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPA083N10N5XKSA1
Per Unit
$1.01
RFQ
18,140
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 45A TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-FP 36W (Tc) N-Channel - 100V 44A (Tc) 8.3 mOhm @ 44A, 10V 3.8V @ 49µA 37nC @ 10V 2730pF @ 50V 6V, 10V ±20V
IPP083N10N5AKSA1
Per Unit
$0.92
RFQ
79,640
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH TO220-3 OptiMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 PG-TO-220-3 100W (Tc) N-Channel - 100V 73A (Tc) 8.3 mOhm @ 73A, 10V 3.8V @ 49µA 37nC @ 10V 2730pF @ 50V 6V, 10V ±20V
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