3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPD30N10S3L34ATMA1
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RFQ
13,220
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Infineon Technologies MOSFET N-CH 100V 30A TO252-3 OptiMOS™ Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel - 100V 30A (Tc) 31 mOhm @ 30A, 10V 2.4V @ 29µA 31nC @ 10V 1976pF @ 25V 4.5V, 10V ±20V
IPD30N10S3L34ATMA1
Per Unit
$0.51
RFQ
44,000
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Infineon Technologies MOSFET N-CH 100V 30A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel - 100V 30A (Tc) 31 mOhm @ 30A, 10V 2.4V @ 29µA 31nC @ 10V 1976pF @ 25V 4.5V, 10V ±20V
IPD30N10S3L34ATMA1
Per Unit
$0.20
RFQ
33,760
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 100V 30A TO252-3 OptiMOS™ Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 57W (Tc) N-Channel - 100V 30A (Tc) 31 mOhm @ 30A, 10V 2.4V @ 29µA 31nC @ 10V 1976pF @ 25V 4.5V, 10V ±20V
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