- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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53,920
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|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | ||
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GET PRICE |
64,580
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|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V | ||
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GET PRICE |
57,500
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|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | ||
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GET PRICE |
56,220
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|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | ||
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|
49,660
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|
Vishay Siliconix | MOSFET N-CH 100V 1A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1A (Ta) | 540 mOhm @ 600mA, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | 4V, 5V | ±10V | |||
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|
|
12,460
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|
Vishay Siliconix | MOSFET N-CH 60V 1.7A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 1.7A (Ta) | 200 mOhm @ 1A, 5V | 2V @ 250µA | 8.4nC @ 5V | 400pF @ 25V | 4V, 5V | ±10V | |||
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|
15,400
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|
Vishay Siliconix | MOSFET N-CH 100V 1.3A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 100V | 1.3A (Ta) | 270 mOhm @ 780mA, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | 4V, 5V | ±10V | |||
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|
|
15,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Vishay Siliconix | MOSFET N-CH 60V 2.5A 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1.3W (Ta) | N-Channel | 60V | 2.5A (Ta) | 100 mOhm @ 1.5A, 5V | 2V @ 250µA | 18nC @ 5V | 870pF @ 25V | 4V, 5V | ±10V |
