Supplier Device Package :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPW60R125C6FKSA1
Per Unit
$2.83
RFQ
26,920
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 30A TO247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 219W (Tc) N-Channel - 600V 30A (Tc) 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 96nC @ 10V 2127pF @ 100V 10V ±20V
APT30N60BC6
Per Unit
$3.75
RFQ
72,320
One step to sell excess stocks.Or submit Qty to get quotes
Microsemi Corporation MOSFET N-CH 600V 30A TO-247 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 219W (Tc) N-Channel - 600V 30A (Tc) 125 mOhm @ 14.5A, 10V 3.5V @ 960µA 88nC @ 10V 2267pF @ 25V 10V ±20V
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