- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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41,240
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 650V 38A TO220 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 278W (Tc) | N-Channel | - | 650V | 38A (Tc) | 99 mOhm @ 12.8A, 10V | 3.5V @ 1.2mA | 15nC @ 10V | 2780pF @ 100V | 10V | ±20V | |||
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32,820
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 650V 31A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 255W (Tc) | N-Channel | - | 650V | 31A (Tc) | 99 mOhm @ 18A, 10V | 3.5V @ 1.2mA | 80nC @ 10V | 2800pF @ 100V | 10V | ±20V |
