Package / Case :
Supplier Device Package :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IPW60R099CPFKSA1
Per Unit
$4.26
RFQ
71,760
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 31A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 255W (Tc) N-Channel - 650V 31A (Tc) 99 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V
IPP60R099CPXKSA1
Per Unit
$3.89
RFQ
32,820
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 650V 31A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 255W (Tc) N-Channel - 650V 31A (Tc) 99 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V
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