- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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31,800
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|
Infineon Technologies | MOSFET N-CH 650V 31.2A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220 Full Pack | 34.7W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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73,360
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|
Infineon Technologies | MOSFET N-CH 650V 31.2A TO262 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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62,540
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|
Infineon Technologies | MOSFET N-CH 700V 31.2A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 277.8W (Tc) | N-Channel | - | 700V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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GET PRICE |
47,400
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|
Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | CoolMOS™ | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | ||
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53,920
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|
Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | CoolMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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47,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 650V 31.2A TO263 | CoolMOS™ | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V | |||
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23,500
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|
Infineon Technologies | MOSFET N-CH 650V 31.2A TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 277.8W (Tc) | N-Channel | - | 650V | 31.2A (Tc) | 110 mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118nC @ 10V | 3240pF @ 100V | 10V | ±20V |
