- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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77,320
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Infineon Technologies | MOSFET N-CH 800V 17A TO-247 | CoolMOS™ | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 227W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2320pF @ 25V | 10V | ±20V | ||
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32,120
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 800V 17A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 227W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2320pF @ 25V | 10V | ±20V | |||
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60,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 800V 17A TO-220AB | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 208W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2320pF @ 25V | 10V | ±20V | |||
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42,000
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 800V 17A TO220FP | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO220-3 | 42W (Tc) | N-Channel | - | 800V | 17A (Tc) | 290 mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | 2320pF @ 25V | 10V | ±20V |
