- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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54,860
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|
Infineon Technologies | MOSFET N-CH 650V 12A TO-247 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | ||
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55,280
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|
Infineon Technologies | MOSFET N-CH 650V 12A TO-262 | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | ||
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GET PRICE |
66,100
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|
Infineon Technologies | MOSFET N-CH 650V 12A TO263-3 | CoolMOS™ | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V | ||
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29,100
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|
Infineon Technologies | MOSFET N-CH 650V 12A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104W (Tc) | N-Channel | - | 650V | 12A (Tc) | 250 mOhm @ 7.8A, 10V | 3.5V @ 440µA | 35nC @ 10V | 1200pF @ 100V | 10V | ±20V |
